Volume 70, №6
MODELING OF ION-IMPLANTED ARSENIC DIFFUSION IN A POLYSILICON-SILICON SYSTEM
A model of transfer processes of impurity atoms in a polysilicon-silicon system which describes the segregation of the impurity at the phase boundary is constructed. An algorithm is developed and numerical calculations are made for arsenic diffusion with allowance for a nonuniform defect distribution at the phase boundary.
A model of transfer processes of impurity atoms in a polysilicon-silicon system which describes the segregation of the impurity at the phase boundary is constructed. An algorithm is developed and numerical calculations are made for arsenic diffusion with allowance for a nonuniform defect distribution at the phase boundary.
Author: O. I. Velichko , F. F. Komarov , N. M. Lukanov , A. N. Muchinskii , N. L. Prokhorenko , V. A. Tsurko
Page: 988
O. I. Velichko , F. F. Komarov , N. M. Lukanov , A. N. Muchinskii , N. L. Prokhorenko , V. A. Tsurko.
MODELING OF ION-IMPLANTED ARSENIC DIFFUSION IN A POLYSILICON-SILICON SYSTEM //Journal of engineering physics and thermophysics.
. Volume 70, №6. P. 988.
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