DEVELOPING THE TECHNOLOGY FOR MANUFACTURING OHMIC CONTACTS AND SEALING SEMICONDUCTOR TEMPERATURE CONVERTERS

It has been studied and established that the formation of ohmic contacts is one of the final and most important
operations in the technological process of manufacturing semiconductor temperature converters, since the change
in the characteristics of the device and its performance as a whole depend on the quality of the contacts. The
specific resistance of the contact depends exponentially on the ratio of the height of the potential barrier of the
contact to the root of the doping concentration of the region on which the contact is formed. At N > 10 17 cm –3 the
specific contact resistance ρ is determined mainly by tunneling processes and decreases rapidly as the degree of
doping increases. Therefore, to obtain small values of ρ, a high degree of doping or a small barrier height h b is
necessary. When manufacturing ohmic contacts, it should also be taken into account that the height of the energy
barrier h b is very sensitive to heat treatment of the sample before and after spraying

Author:  A. T. Rakhmanov and G. G. Boboev
Keywords:  semiconductor, ohmic contacts, single crystal, doping, specific resistance, silicon, converter, temperature, sputtering
Page:  841