PROPERTIES OF A SILICON SURFACE EXPOSED
TO NANOSECOND LASER-RADIATION PULSES

V. A. Pilipenko, D. V. Vecher, V. A. Gorushko,
V. S. Syakerskii, and T. V. Petlitskaya

UDC 621.382:621.373.820

Results of the use of nanosecond laser pulses in the technology 
of production of very-large-scale integration circuits are presented. 
It is shown that, depending on the conditions of processing of silicon 
by these pulses, they can avoid mechanical failure of the silicon 
crystal lattice and form a gettering layer that cleans the silicon 
from impurities.

Semiconductor-Device Plant, Integral Scientific-Production Association, 
1 Kazinets Sq., Minsk, 220108, Belarus. Translated from Inzhenerno-
Fizicheskii Zhurnal, Vol. 81, No. 3, pp. 592-595, May-June, 2008. 
Original article submitted April 12, 2007; revision submitted October 1, 2007.