MODEL OF LASER GETTERING OF FAST-DIFFUSING IMPURITIES
V. A. Pilipenko, V. N. Ponomar', and V. A. Gorushko UDC 621.382:621.373.820 A model of gettering of fast-diffusing impurities in silicon wafers has been proposed; this model makes it possible to determine efficient gettering regimes ensuring the production of high-quality silicon wafers with reproducible characteristics for using them in the technology of creation of very large-scale integrated circuits. "Belmikrosistemy" Unitary Enterprise, "Integral" Scientific-Production Association, 12 Korzhenevskii Str., Minsk, 220064, Belarus. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 78, No. 3, pp. 190-192, May-June, 2005. Original article submitted June 8, 2004.