TRANSFORMATION OF THE DEFECTS OF GOLD IN SILICON: STRUCTURAL PHASE TRANSITIONA. S. Zakirov, Kh. T. Igamberdiev, A. T. Mamadalimov, L. F. Musaeva, and A. A. Saidov UDC 536.2 Based on the experimental data on the specific heat and photoconductivity of silicon doped with gold, the possible mechanisms of transformation of the impurity centers of gold in the crystal lattice of silicon and accordingly phase transitions are discussed. Department of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan; email: firstname.lastname@example.org. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 5, pp. 110-113, September-October, 2003. Original article submitted July 23, 2002; revision submitted March 17, 2003.