REMOVAL OF PHOTORESIST MASKS WITH THE USE OF RAPID HEAT TREATMENTV. A. Pilipenko, V. N. Ponomar', and V. A. Gorushko UDC 621.3.049.77.621.373.826 An analysis of the main methods of removal of photoresists, used in microelectronics, has been performed. The possibility of using rapid heat treatment for this purpose has been investigated and results of an analysis of the surface of silicon and aluminum after the removal of a photoresist have been presented. All the results have been considered in comparison to the traditional methods of removal of a photoresist, used in the technology of manufacture of very large-scale integrated circuits. "Integral" Scientific-Production Association, 12 Korzhenevskii Str., Minsk, 220064, Belarus; email: email@example.com. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 5, pp. 107-109, September-October, 2003. Original article submitted March 24, 2003.