HYBRID MODEL OF THERMOSTABILIZATION OF THE DRAIN CURRENT IN n-CHANNEL MOS TRANSISTORSA. D. Andreev, V. M. Borzdov, A. A. Valiev, O. G. Zhevnyak, and F. F. Komarov UDC 621.382.323-416 A hybrid model, which makes it possible to calculate the influence of the drain voltage and the temperature on the mobility of electrons in the n-channel of silicon MOS transistors with a high-alloy substrate in the linear regime of their operation on the basis of a combination of analytical approximations and modeling of electron transfer by the Monte Carlo method, has been proposed. Belarusian State University, Minsk, Belarus; email: firstname.lastname@example.org. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 4, pp. 104-106, July-August, 2003. Original article submitted November 18, 2002.