BILATERALLY SENSITIVE PHOTODIODE STRUCTURES IN THE SYSTEM GALLIUM ARSENIDE-CADMIUM SULFIDEK. Vakhobov,a A. V. Karimov,a A. G. Gaibov,a D. M. Edgorova,a and Kh. T. Igamberdievb UDC 621.315.592 It has been shown experimentally that in a double-barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of cutoff p-n-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have the identical form where the mechanism of formation is determined by the processes occurring in the regions of space charge which are located predominantly in the common (pGaAs) region. aTashkent State Technical University, Tashkent, Republic of Uzbekistan; bDepartment of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan. Translated from Inzhenerno -Fizicheskii Zhurnal, Vol. 76, No. 1, pp. 167-169, January-February, 2003. Original article submitted December 11, 2001; revision submitted July 17, 2002.