CHARGE PROPERTIES OF A CONDENSER SYSTEM BASED ON THE TWO-LAYER DIELECTRIC SiO2-Ta2O5V. A. Pilipenko, V. N. Ponomar', and T. V. Petlitskaya UDC 539.2116.2 A variant of a combined dielectric for the condensers of very large-scale integrated circuits (VLSICs) has been proposed. Its electrophysical and mechanical properties have been analyzed. The influence of the thickness of each of the dielectrics on the effective built-in charge, the permittivity, and the threshold voltage has been considered. Special emphasis has been placed on the residual mechanical stresses in a three-layer dielectric system, namely, the influence of the thickness of a Ta2O5 film on the radius of curvature of the Si-SiO2-Ta2O5 system has been analyzed and the dependence of the change in the effective built-in charge in the Ta2O5 film on the radius of curvature of the plate has been determined. "Integral" Scientific-Production Association, Minsk, Belarus; email:email@example.com. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 1, pp. 164-166, January-February, 2003. Original article submitted July 18, 2002.