3D MODELING OF THERMAL ANNEALING
OF ION-IMPLANTED IMPURITIES

M. V. Kazitov , V. V. Nelaev , and E. F. Nogotov

UDC 621.382

Three-dimensional (3D) mathematical modeling of the 
technological operations reflects most realistically the physical 
processes that occur in formation of structural elements of superlarge 
integrated circuits (SLICs). However multidimensional modeling of 
the technology of SLIC manufacture requires the use of economical 
algorithms for numerical solution of the initial mathematical problem. 
An efficient procedure for calculating numerically the 3D profile 
of the dopant distribution formed as a result of thermal annealing 
after implantation is proposed. The problem of the modeling of the 
diffusional redistribution of the dopant in annealing in an active 
medium is considered. Some results of calculations are discussed.