Journal of Engineering Physics and Thermophysics is a translation of Inzhenerno-fizicheskii Zhurnal,
a publication of the Academic Scientific Complex "A. V. Luikov Heat and Mass Transfer Institute"
of the National Academy of Sciences of Belarus
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CALCULATION OF THE GATE CURRENT DUE TO INJECTION OF 
HOT ELECTRONS INTO THE SUBGATE OXIDE OF A SUBMICROMETER 
MOS FIELD-EFFECT TRANSISTOR

V. M. Borzdov , N. P. Boreiko ,
V. O. Galenchik , O. G. Zhevnyak , and
F. F. Komarov

UDC 621.382.323-416

The gate current of a submicrometer MOS field-effect transistor  
is  calculated  using  the  "lucky  electron"  model.  The main 
parameters  of  the  model  are  estimated  based on results of 
a kinetic Monte Carlo simulation of the electron transport.

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