FORMATION OF A FILM-SUBSTRATE INTERFACE
IN THE SILICON-DIAMOND SYSTEM

L. O. Meleshko

UDC 536.425

The paper presents results of research on the forces 
of interaction of a pair of isolated carbon atoms and of a carbon 
atom in the gas phase with diamond and silicon substrates in relation 
to the distance between them. Based on the results obtained, the conclusion 
is drawn that the transition of atoms to an ordered array in formation 
of a single-crystal film is caused by the forces of interaction between 
atoms of the precipitate whose electronic structure can change with 
a change in the energy of interaction.

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